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Fabrication of thick, high-quality strained SiGe layer on ultra-thin silicon-on-insulator and modeling of film strain — Zengfeng Di (2004) | RDL Network
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Fabrication of thick, high-quality strained SiGe layer on ultra-thin silicon-on-insulator and modeling of film strain
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Paul Kim Ho Chu
Fabrication of thick, high-quality strained SiGe layer on ultra-thin silicon-on-insulator and modeling of film strain
Article
2004
en
Authors
+2 more
ZD
Zengfeng Di
MZ
Miao Zhang
WL
Weili Liu
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