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Fabrication and characterization of low temperature (<450°C) grown p-Ge/n-Si photodetectors for silicon based photonics — Prabhakar R. Bandaru (2004) | RDL Network
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Fabrication and characterization of low temperature (<450°C) grown p-Ge/n-Si photodetectors for silicon based photonics
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Eli Yablonovitch
University of California, Berkeley
Fabrication and characterization of low temperature (<450°C) grown p-Ge/n-Si photodetectors for silicon based photonics
Article
2004
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Authors
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PB
Prabhakar R. Bandaru
SS
Subal Sahni
Eli Yablonovitch
University of California, Berkeley
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