Epitaxial lift-off for wafer-scale GaAs-on-Si semi-monolithic integration

Summary form only given. We have developed a manufacturable epitaxial lift-off process to integrate a 2 GaAs epi-layer containing active photonic devices onto a much larger 5 processed Si VLSI wafer. The availability of this ELO hetero-integration process will be extremely valuable in high-performance and reliable optoelectronic integrated systems.