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Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator — Zengfeng Di (2006) | RDL Network
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Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator
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Paul Kim Ho Chu
Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator
Article
2006
en
Authors
+5 more
ZD
Zengfeng Di
MZ
Miao Zhang
WL
Weili Liu
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