Skip to content
RDL
Network
Ekosistem
Uygulama değiştir
EN
Hakkımızda
SSS
Giriş yap
Başla
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules (2017) | RDL Network
Back
Cite
Save
Save for later
Share
Home
Publications
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules
Shared by
Frede Blaabjerg
Aalborg University
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules
Article
2017
en
Related publications
Article
2017
Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions
Article
2018
Solder layer degradation measurement for sic-MOSFET modules under accelerated power cycling conditions
Article
2018
On-line solder layer degradation measurement for SiC-MOSFET modules under accelerated power cycling condition
Discussion
(0)
Sign in
to like and join the discussion.
No comments yet. Be the first to comment.
Article
2019
Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules
Article
2016
Investigation on the short circuit safe operation area of SiC MOSFET power modules
Discussion(0)
No comments yet. Be the first to comment.