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DAMAGE DISTRIBUTION AND ANNEALING BEHAVIOR OF HIGH-ENERGY IN-115+ IMPLANTED INTO SI(100) — Bx Zhang (1990) | RDL Network
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DAMAGE DISTRIBUTION AND ANNEALING BEHAVIOR OF HIGH-ENERGY IN-115+ IMPLANTED INTO SI(100)
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Zhong Lin Wang
Beijing Institute of Technology
DAMAGE DISTRIBUTION AND ANNEALING BEHAVIOR OF HIGH-ENERGY IN-115+ IMPLANTED INTO SI(100)
Article
1990
en
Authors
+3 more
BZ
Bx Zhang
Zhong Lin Wang
Beijing Institute of Technology
RS
R.J. Schreutelkamp
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