GETTERING EFFECTS IN BF2-IMPLANTED SI(100) BY ION-BEAM DEFECT ENGINEERING

The gettering effects of ion‐beam defect engineering (IBDE) in BF2‐implanted silicon have been studied. It has been shown that the IBDE technique may be useful in the improvement of the properties of BF2‐implanted silicon. The gettering layer introduced by MeV Si ion irradiation and formed during the process of thermal annealing collects not only impurities but also simple defects. Thus, it effected (1) reductions of secondary defects and F impurity accumulation in the BF2‐doped region; (2) reduction of the anomalous diffusion of B atoms; and (3) enhancement of the electrical activation of B atoms.