CMOS Image Sensors With Multi-Bucket Pixels for Computational Photography
IEEE Journal of Solid-State Circuits 47(4): 1031-1042
Article 2012 English
Authors
GW
Gordon Wan
XL
Xiangli Li
GA
Gennadiy Agranov
Abstract
1 min read
This paper presents new image sensors with multi- bucket pixels that enable time-multiplexed exposure, an alter- native imaging approach. This approach deals nicely with scene motion, and greatly improves high dynamic range imaging, structured light illumination, motion corrected photography, etc. To implement an in-pixel memory or a bucket, the new image sensors incorporate the virtual phase CCD concept into a standard 4-transistor CMOS imager pixel. This design allows us to create a multi-bucket pixel which is compact, scalable, and supports true correlated double sampling to cancel kTC noise. Two image sensors with dual and quad-bucket pixels have been designed and fabricated. The dual-bucket sensor consists of a 640 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">H</sub> × 576 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</sub> array of 5.0 μm pixel in 0.11 μm CMOS technology while the quad-bucket sensor comprises 640 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">H</sub> × 512 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</sub> array of 5.6 μm pixel in 0.13 μm CMOS technology. Some computational photography applications were implemented using the two sensors to demonstrate their values in eliminating artifacts that currently plague computational photography.
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