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Characterizing individual SnO2 nanobelt field-effect transistors and their intrinsic responses to hydrogen and ambient gases — Yi Cheng (2012) | RDL Network
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Characterizing individual SnO2 nanobelt field-effect transistors and their intrinsic responses to hydrogen and ambient gases
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Zhong Lin Wang
Beijing Institute of Technology
Characterizing individual SnO2 nanobelt field-effect transistors and their intrinsic responses to hydrogen and ambient gases
Article
2012
en
Authors
+2 more
YC
Yi Cheng
RY
Rusen Yang
JZ
Jian-Ping Zheng
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