Perylenediimide Nanowires and Their Use in Fabricating Field-Effect Transistors and Complementary Inverters — Alejandro L. Briseño (2007) | RDL Network
Perylenediimide Nanowires and Their Use in Fabricating Field-Effect Transistors and Complementary Inverters
Article 2007 en
Authors
AB
Alejandro L. Briseño
SM
Stefan C. B. Mannsfeld
CR
Colin Reese
Abstract
1 min read
Perylenetetracarboxyldiimide (PTCDI) nanowires self-assembled from commercially available materials are demonstrated as the n-channel semiconductor in organic field-effect transistors (OFETs) and as a building block in high-performance complementary inverters. Devices based on a network of PTCDI nanowires have electron mobilities and current on/off ratios on the order of 10-2 cm2/Vs and 104, respectively. Complementary inverters based on n-channel PTCDI nanowire transistors and p-channel hexathiapentacene (HTP) nanowire OFETs achieved gains as high as 8. These results demonstrate the first example of the use of one-dimensional organic semiconductors in complementary inverters.
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