Gapless helical edge modes are a hallmark of the quantum spin Hall effect. Protected by time-reversal symmetry, each edge contributes a quantized zero-temperature conductance quantum $G_0 \equiv e^2/h$. However, the experimentally observed conductance in WTe$_2$ decreases below $G_0$ per edge already at edge lengths around 100 nm, even in the absence of explicit time-reversal breaking due to an external field or magnetic impurities. In this work, we show how a time-reversal breaking excitonic condensate with a spin-spiral order that can form in WTe$_2$ leads to the breakdown of conductance quantization. We perform Hartree-Fock calculations to compare time-reversal breaking and preserving excitonic insulators. Using these mean-field models we demonstrate via quantum transport simulations that weak non-magnetic disorder reproduces the edge length scaling of resistance observed in the experiments. We complement this by analysis in the Luttinger liquid picture, shedding additional light on the mechanism behind the quantization breakdown.
An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.
An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.
No abstract is provided for this article.
Our findings suggest that functional limitation in Americans between the ages of 55 and 84 years is inversely related to social class across the full spectrum of the socioeconomic gradient.
We report studies of the hydrostatic pressure dependence of the fundamental bandgap of InN, In-rich In1−xGaxN (0<x<0.5) and In1−xAlxN (x=0.25) alloys. The bandgap shift with pressure was measured by optical absorption experiments with samples mounted in diamond anvil cells. The pressure coefficient is found to be 3.0±0.1 meV/kbar for InN. A comparison between our results and previously reported theoretical calculations is presented and discussed. Together with previous experimental results, our data suggest that the pressure coefficients of group III nitride alloys have only a weak dependence on the alloy composition. The photoluminescence signals appear to yield significantly smaller pressure coefficients than the bandgap from absorption measurements. This is due to emission associated with highly localized states. Based on these results, the absolute deformation potentials of the conduction and valence band edges are estimated.