Manipulating the<i>L</i>-valley electron<i>g</i>factor in Si-Ge heterostructures

The Zeeman effect for the L valley conduction band electrons in SiGe heterostructures is considered. A detailed calculation of the electron g tensor is performed in the framework of a relevant $\mathit{k}\ensuremath{\cdot}\mathit{p}$ model, developed specifically for the L point of the Brillouin zone. Electrons at the L point are considered under the influence of the different crystallographic orientations, alloy composition, quantum confinement, strain, and electric field, whose interplay causes a considerable deviation of the g tensor components from their bulk values. Our result strongly suggests that the SiGe-based quantum wells are a promising choice for the g tensor engineering for spin manipulation.