ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTDynamics of flow-induced surface exchangeChristophe David, Morton M. Denn, and Alexis T. BellCite this: Ind. Eng. Chem. Res. 1995, 34, 10, 3336–3341Publication Date (Print):October 1, 1995Publication History Published online1 May 2002Published inissue 1 October 1995https://pubs.acs.org/doi/10.1021/ie00037a020https://doi.org/10.1021/ie00037a020research-articleACS PublicationsRequest reuse permissionsArticle Views44Altmetric-Citations8LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsGet e-AlertscloseSupporting Info (3)»Supporting Information Supporting Information Get e-Alerts
Summary form only given. Gallium nitride materials and alloys are fast becoming important semiconductors as blue and UV light emitters due to their wide band-gaps. Applications for highly efficient blue LEDs and UV lasers include large full-color flat panel displays and high-density optical data storage. We report what we believe to be the first measurement of the absolute internal luminescence quantum efficiency of an InGaN/GaN single quantum well. The absolute external luminescence efficiency is calibrated with respect to a perfect 100 % Lambertian reflector. In addition, a correction factor must be used due to the difference between the PL and the pump wavelength. The final step is then to obtain the internal efficiency of the quantum well from the calibrated external efficiency. We use the photonic gas model, which requires that we model losses in the semiconductor due to reflections from the air-GaN interface, absorption in the cap layer and quantum well, and solid angle for the photon escape cone. Measurements included both luminescence due to the band-to-band transitions and luminescence due to all transitions. Results indicate that the band-edge luminescence internal efficiency is as high as 27% and the luminescence internal efficiency for the full spectral range is as high as 31% for high intensity optical pumping. We have thus developed a technique to make accurate measurements of absolute internal luminescence efficiencies for the GaN materials and alloys.
The development of manipulation tools that are not too ‘fat’ or too ‘sticky’ for atomic scale assembly is an important challenge facing nanotechnology1. Impressive nanofabrication capabilities have been demonstrated with scanning probe manipulation of atoms2,3,4,5 and molecules4,6 on clean surfaces. However, as fabrication tools, both scanning tunnelling and atomic force microscopes suffer from a loading deficiency: although they can manipulate atoms already present, they cannot efficiently deliver atoms to the work area. Carbon nanotubes, with their hollow cores and large aspect ratios, have been suggested7,8 as possible conduits for nanoscale amounts of material. Already much effort has been devoted to the filling of nanotubes8,9,10,11 and the application of such techniques12,13. Furthermore, carbon nanotubes have been used as probes in scanning probe microscopy14,15,16. If the atomic placement and manipulation capability already demonstrated by scanning probe microscopy could be combined with a nanotube delivery system, a formidable nanoassembly tool would result. Here we report the achievement of controllable, reversible atomic scale mass transport along carbon nanotubes, using indium metal as the prototype transport species. This transport process has similarities to conventional electromigration, a phenomenon of critical importance to the semiconductor industry