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An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.
Chapter 6 reviews the literature on behavioural processes and draws conclusions about the extent to which they are transdiagnostic. Three behavioural processes considered are escape/avoidance, within-situation safety-seeking behaviours, and ineffective safety-signals. These processes are considered in the context of anxiety disorders and obsessive-compulsive disorder (OCD), somatoform disorders, eating disorders, sleep disorders, and substance-related disorders).
New direction: Changes in the ligand structure divert the reactivity of vanadium(V) oxo complexes from alcohol oxidation to a novel non-oxidative CO bond cleavage. Thus, highly functionalized aryl enones can be selectively generated from lignin model compounds by vanadium-catalyzed cleavage of the β-O-4 linkage (see scheme; N blue, O red).
The ansa complex Me2Si(C5Me4)2ScMe (2) was isolated in 45% yield from the reaction of Me2Si(C5Me4)2ScCH2CH(CH2CH3)2 (1) with methane. The rate of the C−H bond activation of methane by 2 was found to be 2 orders of magnitude greater than that by Cp*2ScMe. Compound 2 is a catalyst for the addition of methane across the double bond of secondary terminal olefins.
The effect of EDTA (ethylenediaminetetraacetic acid, added as ) on the electrochemical behavior of iron and on the semiconducting properties of passive films formed on this metal in borate buffer solution (pH 8.4) was studied. Electrochemical studies, including potentiodynamic and galvanostatic reduction experiments and capacitance measurements coupled with Mott‐Schottky analysis, were carried out over the entire passive range in borate buffer solutions in the presence and absence of 0.01 M EDTA. Passive films formed in the presence of EDTA were thinner and showed higher donor concentrations. EDTA present in the borate buffer solution effectively inhibited the formation of the Fe(III) outer layer, thereby rendering the defective inner layer to direct examination. The barrier layer is found to be an n‐type semiconductor, which is consistent with the oxide being a defective magnetite in which the principal defects are oxygen vacancies and cation interstitials. EDTA effectively competes with chloride ion for adsorption into oxygen vacancies at the barrier layer/solution interface, thereby suggesting that the chelating agent might be an effective inhibitor of passivity breakdown. © 2000 The Electrochemical Society. All rights reserved.
The paper gives several fundamental results on strong structural stability of nonlinear resistive <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</tex> -ports. A nonlinear resistive <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</tex> -port consists of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n_{R}</tex> (coupled) internal resistors and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</tex> external ports. Intersection of the internal resistor constitutive relations and the Kirchhoff space is called the configuration space. The projected image of the configuration space onto the port space is called the constitutive relation of the composite <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</tex> -port. Strong structural stability means qualitative persistence of the constitutive relation of composite <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</tex> -port under small perturbations of internal resistor constitutive relations. Theorem I asserts that a nonlinear resistive <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</tex> -port is strongly structurally stable if and only if (i) Kirchhoff space is transversal to the internal resistor constitutive relations, and (ii) the projection map of the configuration space onto port space is a nice immersion. There is, however, an underlying assumption for this fact to be true; there are no port-only loops and no port-only cut sets (Condition P). Theorem 2 says that there are "many" strongly structurally stable <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</tex> -ports, Theorem 3 gives a strong structural stabilization result via network perturbation, and Theorem 4 and Theorem 5 give results for special class of internal resistor constitutive relations.