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We have carried out first principles calculations for the adsorption of oxygen on the Cu(110) surface. The stable adsorption sites of chemisorbed atomic oxygen on the clean unreconstructed surface are investigated at 1/6, 1/2, 2/3 and 1monolayer (ML) coverage. For the low coverage case, the O atom is found to be most stable in a position close to the fourfold hollow site. At half coverage, the most stable structure is – in agreement with experiment – the (2×1) pairing row reconstruction. The electronic properties of the (2×1) reconstruction are evaluated and discussed in detail. To study the growth of the (2×1) added row reconstruction an investigation of the diffusion pathways of Cu and O adatoms on the surface is presented. The diffusion barriers for O adatoms are found to be 150meV in the [1 1 ̄ 0] and 300meV in the [001] direction. For Cu adatoms, both the “jump” mechanism, by which diffusion parallel to the [001] troughs is accomplished, and the “exchange” mechanism, which is responsible for the diffusion parallel to the [1 1 ̄ 0] direction, are investigated, and the diffusion barriers are evaluated. We find that the exchange mechanism has a slightly higher barrier (350meV) than the jump mechanism (230meV). The process responsible for the growth of Cu–O–Cu chains parallel to the [001] direction is discussed.
Density functional theory (DFT) calculations of 58 liquid elements at their triple point show that most metals exhibit near proportionality between the thermal fluctuations of the virial and the potential energy in the isochoric ensemble. This demonstrates a general ``hidden'' scale invariance of metals making the condensed part of the thermodynamic phase diagram effectively one dimensional with respect to structure and dynamics. DFT computed density scaling exponents, related to the Gr\"uneisen parameter, are in good agreement with experimental values for the 16 elements where reliable data were available. Hidden scale invariance is demonstrated in detail for magnesium by showing invariance of structure and dynamics. Computed melting curves of period three metals follow curves with invariance (isomorphs). The experimental structure factor of magnesium is predicted by assuming scale invariant inverse power-law (IPL) pair interactions. However, crystal packings of several transition metals (V, Cr, Mn, Fe, Nb, Mo, Ta, W, and Hg), most post-transition metals (Ga, In, Sn, and Tl), and the metalloids Si and Ge cannot be explained by the IPL assumption. The virial-energy correlation coefficients of iron and phosphorous are shown to increase at elevated pressures. Finally, we discuss how scale invariance explains the Gr\"uneisen equation of state and a number of well-known empirical melting and freezing rules.
Ab-initio investigations of the structural and electronic properties of the clean MoS2(010) edge-surface are presented. It is shown that the bulk-terminated surface remains stable in vacuum up to temperatures of T∼700 K, with only modest relaxations of the surface atoms. In contrast to the semiconducting bulk, the (010) surface shows a finite density of states at the Fermi level. On the unsaturated Mo-surface atoms, the most intense surface states are empty dyz and d x 2−y 2 -type states just above the Fermi level, demonstrating the acceptor properties of the surfaces. On the unsaturated S sites, (p y ±p z ) states at the Fermi level promote a tendency to S-S pairing.
The adsorption of 1 L oxygen on the V(100) surface at 200°C leads to a (1×5) reconstruction. The structure of this surface was determined by scanning tunneling microscopy (STM), low energy electron diffraction (quantitative LEED) and density functional theory calculations. The STM images show dark lines every fifth vanadium lattice constant. Between these (1×5) lines, oxygen resides in four-fold coordinated hollow sites with a coverage of ≈70%. From the LEED analysis (Pendry R-factor=0.17) it was found that in the dark lines oxygen adsorbs in bridge sites, in agreement with the ab initio calculations. The driving force behind this reconstruction is surface stress induced by the vanadium–oxygen bonds.
The optimized effective potential (OEP) method presents an unambiguous way to construct the Kohn–Sham potential corresponding to a given diagrammatic approximation for the exchange-correlation functional. The OEP from the random-phase approximation (RPA) has played an important role ever since the conception of the OEP formalism. However, the solution of the OEP equation is computationally fairly expensive and has to be done in a self-consistent way. So far, large scale solid state applications have, therefore, been performed only using the quasiparticle approximation (QPA), neglecting certain dynamical screening effects. We obtain the exact RPA-OEP for 15 semiconductors and insulators by direct solution of the linearized Sham–Schlüter equation. We investigate the accuracy of the QPA on Kohn–Sham bandgaps and dielectric constants, and comment on the issue of self-consistency.
We have calculated static and dynamic response properties for several semiconducting and insulating solids using hybrid functionals, which admix a small fraction of nonlocal Fock exchange to an otherwise semilocal density functional. The calculated static and dynamic properties are clearly improved compared to conventional semilocal density functionals; in particular the oscillator strength at low energy excitations is well described.