504 publications from this institution
Ab initio molecular dynamics based on density functional theory has been used to study liquid Se at three temperatures: 570, 870 and 1370 K. The calculated g(r) is in very close agreement with neutron diffraction data, except in the region of the first minimum at . We have examined the effect of including gradient corrections in the density functional description, and we find that they give a substantial improvement in the agreement with experiment near the first minimum. We analysed the bonding topology and we find a significant fraction of onefold- and threefold-coordinated Se atoms at the highest temperature.
Semilocal density functionals predict that the stable adsorption site of carbon monoxide (CO) on Pt(111) is the hollow fcc site, in disagreement with experimental studies which indicate that CO adsorbs on the top site at low coverage. This site preference depends on a subtle balance between the interaction of the lowest unoccupied molecular orbital (LUMO) and highest occupied molecular orbital (HOMO) with the metal substrate. Local and semilocal functionals seem to overestimate the interaction of the LUMO with the metal substrate, in turn favoring the wrong site. It is argued that this error is related to the ``gap'' problem of present density functionals and might be cured by functionals that increase the HOMO-LUMO separation.
We show that quantum-mechanical molecular-dynamics simulations in a finite-temperature local-density approximation based on the calculation of the electronic ground state and of the Hellmann-Feynman forces after each time step are feasible for liquid noble and transition metals. This is possible with the use of Vanderbilt-type ``ultrasoft'' pseudopotentials and efficient conjugate-gradient techniques for the determination of the electronic ground state. Results for liquid copper and vanadium are presented.
An approach to access the stability of oxides growing on top of a metal support is presented. In combination with first-principles calculations, it allows to predict the stable structures as a function of the thickness of the evaporated metal ad-layer and as a function of the oxygen pressure. The ideas are applied to thin vanadium oxide films growing on Pd(111). To investigate the stability of these oxide films, first-principles calculations for more than 50 thin films of V x O y on Pd were performed at varying stoichiometry and coverage. The general principles determining the growth of thin vanadium oxide films on Pd(111) are discussed, and the experimental results are interpreted in the light of the first-principles calculations. At 1 ML vanadium coverage, a complicated succession of structures is predicted by the calculations. At high oxygen pressure bulk like V2O3 phases are stable. At lower oxygen pressure, however, a surface stabilised (2×2) reconstruction with a formal stoichiometry of V2O3 is predicted, and rectangular and hexagonal vanadium-dioxide phases are expected to grow. At very low oxygen pressures, first the vanadium-dioxide phases and then the surface V2O3 phase decompose and the liberated V atoms move subsurface. These predictions are in good general agreement with experiment. An important result of the study is that the metal surface stabilises thin films which have no equivalent bulk phases.
Correction for 'New insights into the 1D carbon chain through the RPA' by Benjamin Ramberger et al., Phys. Chem. Chem. Phys., 2021, 23, 5254-5260, https://doi.org/10.1039/D0CP06607A.
We present an efficient scheme for calculating the Kohn-Sham ground state of metallic systems using pseudopotentials and a plane-wave basis set. In the first part the application of Pulay's DIIS method (direct inversion in the iterative subspace) to the iterative diagonalization of large matrices will be discussed. Our approach is stable, reliable, and minimizes the number of order ${\mathit{N}}_{\mathrm{atoms}}^{3}$ operations. In the second part, we will discuss an efficient mixing scheme also based on Pulay's scheme. A special ``metric'' and a special ``preconditioning'' optimized for a plane-wave basis set will be introduced. Scaling of the method will be discussed in detail for non-self-consistent and self-consistent calculations. It will be shown that the number of iterations required to obtain a specific precision is almost independent of the system size. Altogether an order ${\mathit{N}}_{\mathrm{atoms}}^{2}$ scaling is found for systems containing up to 1000 electrons. If we take into account that the number of k points can be decreased linearly with the system size, the overall scaling can approach ${\mathit{N}}_{\mathrm{atoms}}$. We have implemented these algorithms within a powerful package called VASP (Vienna ab initio simulation package). The program and the techniques have been used successfully for a large number of different systems (liquid and amorphous semiconductors, liquid simple and transition metals, metallic and semiconducting surfaces, phonons in simple metals, transition metals, and semiconductors) and turned out to be very reliable. \textcopyright{} 1996 The American Physical Society.