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OBJECTIVE We sought to estimate the association between intimate partner violence, a prevalent psychosocial stressor, and the incidence of type 2 diabetes in women. RESEARCH DESIGN AND METHODS In 2001, 68,376 Nurses’ Health Study II participants answered questions on physical, sexual, and psychological intimate partner violence in adulthood (age ≥18 years) and reported the years in which any abuse occurred. We used Cox proportional hazards models to estimate the associations between intimate partner violence exposures and incidence of type 2 diabetes from 2001 to 2007. We also estimated effects of duration and time since intimate partner violence on type 2 diabetes incidence. RESULTS Of 68,376 respondents, 64,732 met inclusion criteria at the 2001 baseline; of these, 23% reported lifetime physical intimate partner violence, 11% reported lifetime sexual intimate partner violence, and 8% reported moderate and <2% reported severe psychological intimate partner violence. Hazard ratios (HRs) and 95% CIs for type 2 diabetes, adjusted for potential confounders, were 1.18 (1.00–1.39) and 1.08 (0.86–1.35) for more than one lifetime episode of physical and sexual intimate partner violence, respectively, and 1.78 (1.21–2.61) for severe psychological abuse. Addition of updated BMI and other diabetes risk factors reduced the physical intimate partner violence HR to 1.12 (0.94–1.33) and the psychological intimate partner violence HR to 1.61 (1.09–2.38). CONCLUSIONS Physical intimate partner violence is modestly associated with incidence of type 2 diabetes in this population. Severe psychological violence may substantially increase type 2 diabetes risk.
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTCarbon-carbon bond formation in aqueous ethanol: diastereoselective transformation of unprotected carbohydrates to higher carbon sugars using allyl bromide and tin metalWalther Schmid and George M. WhitesidesCite this: J. Am. Chem. Soc. 1991, 113, 17, 6674–6675Publication Date (Print):August 1, 1991Publication History Published online1 May 2002Published inissue 1 August 1991https://pubs.acs.org/doi/10.1021/ja00017a049https://doi.org/10.1021/ja00017a049research-articleACS PublicationsRequest reuse permissionsArticle Views610Altmetric-Citations89LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsGet e-AlertscloseSupporting Info (1)»Supporting Information Supporting Information Get e-Alerts
ADVERTISEMENT RETURN TO ISSUEPREVCommunicationNEXTDiameter-Selective Synthesis of Semiconductor NanowiresMark S. Gudiksen and Charles M. LieberView Author Information Department of Chemistry and Chemical Biology Harvard University, Cambridge, Massachusetts 02138 Cite this: J. Am. Chem. Soc. 2000, 122, 36, 8801–8802Publication Date (Web):August 22, 2000Publication History Received6 June 2000Published online22 August 2000Published inissue 1 September 2000https://pubs.acs.org/doi/10.1021/ja002008ehttps://doi.org/10.1021/ja002008erapid-communicationACS PublicationsCopyright © 2000 American Chemical SocietyRequest reuse permissionsArticle Views2296Altmetric-Citations300LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsGet e-Alertsclose SUBJECTS:Catalysts,Colloids,Nanowires,Semiconductors,Wires Get e-Alerts
Das Titelbild zeigt eine Hg-SAM1//SAM2-Ag-Nanoschnittstelle, mit der eine Vielzahl an selbstorganisierten Monoschichten (SAMs) auf ihre elektronischen Eigenschaften untersucht werden kann. Der Aufbau dieser molekularen Schnittstelle, die aus einer Quecksilberelektrode mit der SAM1 (oben) und einem silberbeschichteten Siliciumwafer mit der SAM2 (unten) besteht, ist einfach und erlaubt das schnelle Screening unterschiedlich funktionalisierter Monoschichten. Im Bild erkennt man eine Grenzflächenreflexion (ein Spiegelbild) des Quecksilbertropfens an der unteren Silberschicht. In dieser Messanordnung wurden die elektronischen Eigenschaften einer Reihe von aromatischen und terminal funktionalisierten SAMs gemessen; diese wurden dann mit der molekularen Struktur der jeweiligen SAM korreliert. Einzelheiten über diese Nanoschnittstelle finden sich im Beitrag von M. A. Rampi, G. M. Whitesides et al. auf S. 2378 ff.
Sequences of dynamic instabilities are analyzed for a single degree of freedom elastic system which slides along a surface having frictional resistance depending on slip rate and slip rate history, in the manner of Dieterich, Ruina and others. The system is represented as a rigid block in contact with a fixed surface and having a spring attached to it whose opposite end is forced to move at a uniform slow speed. The resulting “stick‐slip” motions are well understood in the classical case for which there is an abrupt drop from “static” to “sliding” frictional resistance. We analyze them here on the basis of more accurate frictional constitutive models. The problem has two time scales, an inertial scale set by the natural oscillation period T of the analogous frictionless system as T /2π and a state relaxation scale L / V occurring in evolution, over a characteristic slip distance L , of frictional stress τ towards a “steady state” value τ ss ( V ) associated with slip speed V . We show that τ ≃ τ ss ( V ) during motions for which acceleration a satisfies aL / V 2 ≪ 1, and that this condition is met during an inertia controlled instability in typical circumstances for which the unstable slip is much greater than L . Since V / a is of order T /2π during inertia controlled motion, one has L / V ≪ T /2π, whereas L / V ≫ T /2π during much of the essentially quasi‐static “stick” part of the cycle when there is a sufficiently small imposed velocity at the load point. Thus the physically irrelevant time scale ( L / V during inertial controlled motion, T /2π during quasi‐static motion) is much shorter than the relevant scale, which is troublesome from a numerical point of view as it is the shorter time scale which constrains allowable step size. We propose efficient numerical procedures to deal with such response, in which the full equations with inertia and state relaxation are solved only in a transition regime when both time scales are significant. We show results for several friction laws, all having history dependence based on a single evolving state variable and all having properties that ∂τ/∂ V > 0 for instantaneous changes in V , that τ evolves towards τ ss ( V ) as exp (−δ/ L ) with ongoing slip δ when V = const, and that dτ ss ( V )/d V < 0 except possibly at high V . During the dynamic instabilities we find that motion continues at a nearly steady state condition, τ≃τ ss ( V ), until dynamic overshoot becomes so significant that “arrest” begins. In the arrest stage, V drops rapidly to very much lower values (never zero in our models) under nearly fixed state conditions, and then the long quasi‐static “stick” phase of the motion begins again.
