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Abstract Triboelectric nanogenerators (TENG) were invented as a highly effective technology for harvesting ambient mechanical energy. By coupling the TENG and metal‐oxide‐semiconductor field‐effect transistor, a new field of tribotronics has been recently proposed using the electrostatic potential created by triboelectrification as a gate voltage to tune/control charge‐carrier transport in semiconductors. In this work, the performance of a sliding‐electrification‐gated tribotronic transistor (SGT) and a sliding‐electrification‐gated tribotronic logic device (SGL) are theoretically investigated. The drain–source current characteristics for both the N‐channel SGT and P‐channel SGT are calculated in enhancement and depletion modes, respectively, which are found to be controlled by triboelectric charge amount, sliding distance, and drain voltage. By scaling down the conduction channel length to 10 nm, the SGT can still work and exhibit similar current characteristic and charge‐transfer process, showing the great potential of tribotronics in large‐scale array integration. Furthermore, the operation principle of a designed SGL based on two N‐channel SGTs in enhancement mode is revealed. This work could provide in‐depth understanding of physical mechanisms for tribotronic devices and design guidance for potential applications of tribotronics.
<p indent="0mm">The coupling between piezoelectric polarization and semiconductor properties (for example, electronic transport) in low-dimensional piezoelectric semiconductor nanomaterials, such as ZnO and GaN, gives rise to unprecedented device characteristics. This has increased research interest in the emerging fields of piezotronics, which offers new means of manipulating charge-carrier transport, generation, recombination or separation in the controlled operation of flexible devices through the application of external mechanical stimuli. We review the recent progress of the understanding in fundamental theory, investigation in piezotronics in different materials systems, development in piezotronics transistors, and the application of generalized piezotronics transistors, and provide an in-depth discussion of future research directions.
Thin films of thiol-derivatized gold nanocrystals have been formed on amorphous carbon substrates by air drying toluene solutions of these nanocrystals and studied using transmission electron microscopy (TEM). These nanocrystals form both monolayer and bilayer films. Close-packed regions can be identified in monolayer films while the nanocrystals appear to form network-like structures in bilayer films. Toluene solutions containing bimodal distributions of nanocrystals form, upon drying, films in which the nanocrystals appear to occupy distinct regions of the film on the basis of their size. Electron diffraction of these films in conjunction with particle size measurements from TEM images is used to provide support for the possible interpenetration of the monolayers formed by dodecanethiol on adjacent nanocrystal surfaces in close-packed regions.