ZnO nanostructures for optoelectronic applications
Article 2008 en
Authors
AS
Ashok K. Sood
YP
Yash R. Puri
WM
Wenjie Mai
Abstract
1 min read
In this Paper we present growth and characterization of ZnO nanowires on wideband gap substrates, such as SiC and GaN. Experimental results on the ZnO nanowires grown on p-SiC and p-GaN are presented with growth morphology, structure analysis, and dimensionality control. We also present experimental results on individual nanowires such as I-V measurements and UV sensitivity measurements with use of polymer coating on ZnO nanowires. The ZnO nanowires can be used for a variety of nanoscale optical and electronics applications.
Ashok K. Sood, E. James Egerton, Yash R. Puri, John W. Zeller, Tariq Manzur, Dennis L. Polla, Nibir K. Dhar, Jun Zhou, Sheng Xu, Su Zhang, Zhong Lin Wang, A.F.M. Anwar
Discussion(0)
No comments yet. Be the first to comment.