A simple synthesis route to high-quality ZnO nanorod is reported, utilizing ZnO thin films grown by Filtered Pulse Cathodic Vacuum Arc (FPCVA) deposition as seed layers and continuous growth by hydrothermal method. Depending upon the FPCVA deposited conditions, implanted voltages, thickness and annealing temperature of ZnO seed layer, the surface morphology of the ZnO nanorod on ZnO film was noticeably different. The average diameters of the nanorod on Al substrates varied from about 131.99 ± 23.87 to 418.17 ±75.50 nm. The grown ZnO nanorod showed a high crystallinity with energy gap of 3.37 eV and low defect density confirmed by UV/VIS Spectrometer and photoluminescence spectrum (PL). Large-area growth, quasi-aligned and high quality indicates that the ZnO nanorods produced have potential application in field emission and optoelectronic devices.
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