Zirconium Aided Epitaxial Growth of In_xSe_y on InP(111) Substrates

Layered material indium selenide (In x Se y ) is a promising candidate for building next-generation electronic and photonic devices. We report a zirconium aided MBE growth of this van der Waals material. When co-depositing zirconium and selenium onto an indium phosphide substrate with a substrate temperature of 400°C at a constant zirconium flux rate of 0.01 ML/min, the polymorphic In x Se y layer emerges on top of the insulating ZrSe 2 layer. Different archetypes, such as InSe, α -In 2 Se 3 and β -In 2 Se 3 , are found in the In x Se y layers. A negative magnetoresistance of 40% at 2K under 9T magnetic field is observed. Such an In x Se y /ZrSe 2 heterostructure with good lattice-matching may serve as a candidate for device applications.