Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

Thanasis Georgiou; R. Jalil; Branson D. Belle; L. Britnell; Р. В. Горбачев; С. В. Морозов; Yong-Jin Kim; A. Gholinia; Sarah J. Haigh; O. Makarovsky; L. Eaves; Л. А. Пономаренко; A. K. Geǐm; Konstantin ‘kostya’ Novoselov; Artem Mishchenko

doi:10.1038/nnano.2012.224

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

Nature Nanotechnology 8(2): 100-103

Article 2012 English

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Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

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