Ultralow-noise Terahertz Detection by p–n Junctions in Gapped Bilayer Graphene

Graphene shows a strong promise for detection of terahertz (THz) radiation due to its high carrier mobility, compatibility with on-chip waveguides and transistors, and small heat capacitance. At the same time, weak reaction of graphene's physical properties on the detected radiation can be traced down to the absence of band gap. Here, we study the effect of electrically-induced band gap on THz detection in graphene bilayer with split-gate p-n junction. We show that gap induction leads to simultaneous increase in current and voltage responsivities. At operating temperatures of ~25 K, the responsivity at 20 meV band gap is from 3 to 20 times larger than that in the gapless state. The maximum voltage responsivity of our devices at 0.13 THz illumination exceeds 50 kV/W, while the noise equivalent power falls down to 36 fW/Hz^0.5. These values set new records for semiconductor-based cryogenic terahertz detectors, and pave the way for efficient and fast terahertz detection.