Thin Oxidation Study with Various Thermodynamic Parameters

The structure analysis of extremely thin thermally grown SiO2 (< 25 Aå) indicates that most silicon atoms share two of the four tetrahedrally-coordinated oxygen atoms with the adjacent silicon atoms. Molecular mechanics simulation of the single chain of SiO2 tetrahedrons is presented. The extremely thin oxide film is composed of the close-packed short chains of the tetrahedrons perpendicular to Si substrate. Diffusion experiment of an acid vapor through non-oxide polyhydroxystyrene films de-convolutes four prototropic states of fluoresceinamine monolayer to resemble the change of the intermediate states of Si atoms during the thermal oxygen diffusion processes at Si/SiO2 interface.