Devices fabricated by using the inner-crystal piezopotential as a "gate" voltage to tune/control the carrier generation, transport, and recombination processes at the vicinity of a p–n junction are named piezo-phototronics. Here, the theory of the photon emission and carrier transport behavior in piezo-phototronic devices is investigated as a p–n junction light-emitting diode. Numerical calculations are given for predicting the photon emission and current–voltage characteristics of a general piezo-phototronic light-emitting diode.
Discussion(0)
No comments yet. Be the first to comment.