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The surface oxidation of alpha-silicon carbide by O2 from 300 to 1373 K — James M. Powers (1991) | RDL Network
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The surface oxidation of alpha-silicon carbide by O2 from 300 to 1373 K
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Gabor Somorjai
University of California, Berkeley
The surface oxidation of alpha-silicon carbide by O2 from 300 to 1373 K
Article
1991
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