The Rate of Charge Tunneling in EGaIn Junctions Is Not Sensitive to Halogen Substituents at the Self-Assembled Monolayer//Ga₂O₃ Interface

This paper describes experiments that are designed to test the influence of terminal groups incorporating carbon–halogen bonds on the current density (by hole tunneling) across self-assembled monolayer (SAM)-based junctions of the form MTS/S(CH2)9NHCOCHnX3–n//Ga2O3/EGaIn (where M = Ag and Au and X = CH3, F, Cl, Br, I). Within the limits of statistical significance, these rates of tunneling are insensitive to the nature of the terminal group at the interface between the SAM and the Ga2O3. The results are relevant to the origin of an apparent inconsistency in the literature concerning the influence of halogen atoms at the SAM//electrode interface on the tunneling current density.