The Effect of Creep on the Residual Stresses Generated During Silicon Sheet Growth

The modeling of stresses generated during the growth of thin silicon sheets at high speeds is an important part of the EFG technique since the experimental measurement of the stresses is difficult and prohibitive. The residual stresses which arise in such a growth process lead to serious problems which make thin Si ribbons unsuitable for fabrication. The constitutive behavior is unrealistic because at high temperature (close to the melting point) Si exhibits considerable creep which significantly relaxes the residual stresses. The effect of creep on the residual stresses generated during the growth of Si sheets at high speeds was addressed and the basic qualitative effect of creep are reported.