Synthesis of Atomically Thin Transition Metal Disulfides for Charge Transport Layers in Optoelectronic Devices
Article 2015 en
Authors
KK
Ki Chang Kwon
CK
Cheol-Min Kim
QL
Quyet Van Le
Abstract
1 min read
PSS based devices. These results suggest that UV-O3-surface-treated MeS2 could be a promising candidate for a charge transport layer in optoelectronic devices.
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