Synthesis of a Single-Crystal Field-Effect Transistor

The intrinsic charge transport and field-effect properties of a potential organic semiconducting material are commonly measured through analysis of its single crystal. This method provides a look into the performance limitations of the material by necessarily removing molecular disorders such as grain boundaries. Single crystals of 1 show a slipped face-to-face π-stacking with a separation between molecular planes of 3.30 Å. This distance allows for intermolecular overlap of the electronic wave functions. The structure of the crystal is such that anisotropic charge transport is possible with field-effect mobilities of 1 cm2/V×s.