Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires
Journal of Materials Chemistry 12(5): 1606-1611
Article 2002 English
Authors
GG
Gautam Gundiah
GM
G. V. Madhav
AG
A. Govindaraj
Abstract
1 min read
Several methods have been employed to synthesize SiC nanowires. The methods include heating silica gel or fumed silica with activated carbon in a reducing atmosphere, the carbon particles being produced in situ in one of the methods. The simplest method to obtain β-SiC nanowires involves heating silica gel with activated carbon at 1360 °C in H2 or NH3. The same reaction, if carried out in the presence of catalytic iron particles, at 1200 °C gives α-Si3N4 nanowires and Si2N2O nanowires at 1100 °C. Another method to obtain Si3N4 nanowires is to heat multi-walled carbon nanotubes with silica gel at 1360 °C in an atmosphere of NH3. In the presence of catalytic Fe particles, this method yields α-Si3N4 nanowires in pure form.
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