Superlative spin transport of holes in ultra-thin black phosphorus

The development of energy-efficient spin-based hybrid devices that can perform functions such as logic, communication, and storage requires the ability to control and transport highly polarized spin currents over long distances in semiconductors. While traditional semiconductors such as silicon support spin transport, the effects of carrier type and concentration on important spin parameters are not well understood due to the need for extrinsic doping, which can cause additional momentum and hence spin scattering. Two-dimensional semiconductors, on the other hand, offer the ability to tune carrier type and concentration through field effect gating and inherently have long intrinsic spin lifetimes, making them a desirable platform for spin transport. Here, we study gate-tunable spin transport across narrow band-gap black phosphorus-based spin valves which enable us to systematically investigate spin transport with varying hole and electron concentrations under non-local geometry. Our findings demonstrate exceptional pure spin transport that approaches intrinsic limit, particularly in the low hole doping range. We achieved record non-local signals reaching 350 Ω and spin lifetimes exceeding 16 ns. Contrary to the behaviour seen in typical semiconductors, we find that the spin transport performance of holes in black phosphorus is significantly better than that of electrons, with the Elliott-Yafet process being the primary spin scattering mechanism. The observation of gate-tunable nanosecond spin lifetimes and colossal pure spin signals in both p- and n-type black phosphorus offers promising prospects for the development of novel semiconducting spintronics devices requiring sharp p-n interfaces.