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Subthreshold slope reduction of tunneling transistors through deformation potential engineering — Sapan Agarwal (2008) | RDL Network
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Subthreshold slope reduction of tunneling transistors through deformation potential engineering
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Eli Yablonovitch
University of California, Berkeley
Subthreshold slope reduction of tunneling transistors through deformation potential engineering
Article
2008
en
Authors
SA
Sapan Agarwal
GM
G. Mazzeo
Eli Yablonovitch
University of California, Berkeley
Abstract
1 min read
The subthreshold slope of a tunneling transistor can be reduced by reducing the effects of thermal vibrations on the band edge energy through a biaxial tensile strain and using a silicon germanium superlattice.
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