Study on the strain in a silicon microchannel plate by micro-Raman analysis
Article 2016 en
Authors
SX
Shaohui Xu
JF
Jiabing Fang
DW
Dajun Wu
Abstract
1 min read
Micro-Raman analysis was used to identify the oxidation of a silicon microchannel plate (SiMCP) and it indicated that the bend phenomenon of the SiMCP was related to the release of stress and the volume expending of the silicon wall during the oxidation process.
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