Studies of interfacial composition of TiN films formed by plasma‐assisted chemical vapor deposition using an <i>i</i><i>n</i> <i>s</i><i>i</i><i>t</i><i>u</i> scratching device — Michael R. Hilton (1986) | RDL Network
Studies of interfacial composition of TiN films formed by plasma‐assisted chemical vapor deposition using an <i>i</i><i>n</i> <i>s</i><i>i</i><i>t</i><i>u</i> scratching device
Article 1986 en
Authors
MH
Michael R. Hilton
AM
A. M. Middlebrook
GR
Geovani Rodrigues
Abstract
1 min read
The interfacial composition of plasma‐assisted chemical vapor deposited TiN films on M2 tool steel is reported. An in situ scratcher with a scratch adhesion test type diamond stylus was used to create scratches in ultrahigh vacuum (UHV). Auger electron spectroscopy analysis of the adhesive mode failures revealed a sharp chlorine concentration gradient at the exposed surface representing the prior interface. The scratch removal technique data is compared to sputter depth profile data. Scanning electron microscopy and energy dispersive spectroscopy investigation of the scratches following the UHV work is also presented and discussed.
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