Structural and optical studies of In(Ga)P nanowires grown on Si(111) substrates by MOCVD
Article 2005 en
Authors
LC
Linus C. Chuang
NK
Nobuhiko P. Kobayashi
EK
Eui‐Tae Kim
Abstract
1 min read
We demonstrated the synthesis of In(Ga)P nanowires on silicon using MOCVD at temperatures 350/spl sim/430 /spl deg/C. PL studies on the In(Ga)P nanowires indicate their tenability of optical properties in spite of a large lattice mismatch 8.07%.
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