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Strain relaxation and dislocation annihilation in compositionally graded α-(AlxGa1-x)2O3 layer for high voltage α-Ga2O3 power devices — Byung‐Soo Kim (2021) | RDL Network
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Strain relaxation and dislocation annihilation in compositionally graded α-(AlxGa1-x)2O3 layer for high voltage α-Ga2O3 power devices
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Ho Won Jang
Strain relaxation and dislocation annihilation in compositionally graded α-(AlxGa1-x)2O3 layer for high voltage α-Ga2O3 power devices
Article
2021
en
Authors
+6 more
BK
Byung‐Soo Kim
DY
Duyoung Yang
WS
Woonbae Sohn
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