Large scale HgTe nanowires have been grown from Te nanowires by solution approach at low temperature. The widths are in the range 10–20 nm, with lengths up to 1µm. The nanowires have been characterized by uv - vis spectra, scanning electron microscopy, energy-disperse X-ray spectroscopy (EDS), transmission electron microscopy. The effects of growth temperature and time have been investigated and the best growth temperature is 80 – 90°C. The electric properties of HgTe nanowires thin film fabricated on glass substrates were investigated and showed Ohm contact.
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