Single-Crystal Silicon Nanotubes, Hollow Nanocones, and Branched Nanotube Networks
ACS Nano 18(4): 3775-3782
Article 2024 English
Authors
CF
Corey P. Fucetola
JW
Justin T. Wang
OB
Olurotimi A. Bolonduro
Abstract
1 min read
We report a general approach for the synthesis of single-crystal silicon nanotubes, involving epitaxial deposition of silicon shells on germanium nanowire templates followed by removal of the germanium template by selective wet etching. By exploiting advances in the synthesis of germanium nanowires, we were able to rationally tune the nanotube internal diameters (5-80 nm), wall thicknesses (3-12 nm), and taper angles (0-9°) and additionally demonstrated branched silicon nanotube networks. Field effect transistors fabricated from p-type nanotubes exhibited a strong gate effect, and fluid transport experiments demonstrated that small molecules could be electrophoretically driven through the nanotubes. These results demonstrate the suitability of silicon nanotubes for the design of nanoelectrofluidic devices.
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