Simulation of suppression of floating-body effect in partially depleted SOI MOSFET using a Si{sub 1-} {sub x} Ge {sub x} dual source structure

The effect of the Si{sub 1-} {sub x} Ge {sub x} source with an underlying p{sup +} region on the suppression of the floating body effects in a partially depleted silicon-on-insulator (SOI) metal oxide silicon field effect transistor (MOSFET) is numerically investigated. Compared to a conventional SOI MOSFET, the kink effect and anomalous sub-threshold slope are reduced and the breakdown voltage is substantially increased. The detailed suppression mechanism is also studied. Our results suggest that the narrow bandgap Si{sub 1-} {sub x} Ge {sub x} source and buried p{sup +} region are favorable to the dispersion of holes generated by impact ionization.