Significantly reduced leakage currents in organic thin film transistors with Mn‐doped Bi₂Ti₂O₇ high‐<i>k</i> gate dielectrics

Abstract We report the fabrication of organic thin‐film transistors (OTFTs) with high‐ k gate dielectrics of Mn‐doped Bi 2 Ti 2 O 7 (BTO) films. 3% Mn‐doped BTO films deposited on polymer substrates by pulsed laser deposition at room temperature exhibit low leakage currents of 2.1 × 10 –8 A/cm 2 at an applied electric field of 0.3 MV/cm, while undoped BTO films show much higher leakage currents of 4.3 × 10 –4 A/cm 2 . Mn doping effectively reduces the number of oxygen vacancies in the films and improves the electrical properties. Low operation voltage and significantly reduced leakage currents are demonstrated in pentacene‐based OTFTs with the Mn‐doped BTO gate dielectrics. (© 2012 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)