Si Nanowire Bridges in Microtrenches: Integration of Growth into Device Fabrication
Article 2005 en
Authors
RH
Ruihua He
DG
Di Gao
FR
F. Ren
Abstract
1 min read
Silicon nanowire bridges are grown in prefabricated microtrenches on (110) silicon-on-insulator wafers (see Figure). Silicon trenches are used as substrates during growth and probing electrodes after growth. This way, nanowire growth and device fabrication can be achieved simultaneously, providing a simple and rational way to realize nanowire-based integrated circuits.
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