Separation test method for investigation of current density effects on bond wires of SiC power MOSFET modules

In this paper, a separation test method for eliminating the effects of different current densities on the bond wires is proposed. The separation test method makes it possible to study the effect of different current density on the fatigue damage of bond wires without changing the temperature swing and average temperature during the test. By analyzing the output characteristics of the linear region of MOSFET, the constraint relations among the gate voltage, on-state voltage drop and junction temperature are revealed in this paper. The one-to-one correspondence between gate voltage and conduction power loss can be used to adjust the current density under fixed temperature swing and average temperature. The commercial Silicon Carbide (SiC) MOSFET modules are tested to experimentally verify the proposed method. Finally, the effectiveness of proposed test method is validated by the experimental results.