Resonant Tunneling Through GaAs Quantum Well with Embedded InAs Quantum Dots

This article investigated the electron resonant tunneling through the GaAs quantum wells with embedded InAs quantum dots. It was found that the localised perturbation generated by the inAs quantum dots strongly influences the wave functions of the sub-band states in the quantum wells. The "inverted bistability" of the third resonance was observed for the samples with quantum dots. The shape of the resonances on the I-V curves under inverted bistability differs from that previously observed adding to the collection of the butterfly-like resonances on the double barrier structures.