Resonance-enhanced electroresistance-magnetoresistance effects in multiferroic tunnel junctions

The electron transport of a multiferroic tunnel junction with a quantum well structure was investigated theoretically. Four distinct resistance states were obtained. Resonant tunneling that comes from the quantum well structure is believed to be responsible for the enhanced tunnel electroresistance-magnetroresistance effects. These results may evoke experimental interest in multiferroic tunnel junctions with a quantum well structure and help to put multi-state storage devices into practice.