Resist system based on the cationic photocrosslinking of poly(4‐hydroxystyrene) and polyfunctional electrophiles

Abstract New resist systems based on acid‐catalyzed, electrophilic aromatic substitution are described. These new resists show high sensitivity to deep UV and E‐beam radiation with values approaching 2 mJ/cm 2 and 2 μC/cm 2 , respectively. The resists are based on a three component system consisting of poly(4‐hydroxystyrene), a polyfunctional, low molecular weight, latent electrophile, and a photoactive onium salt used as an acid generator. Irradiation of the resist film produces a latent image of acid dispersed in the matrix. During the postbaking step the photo‐generated acid reacts with the latent polyfunctional electrophile and releases a reactive carbocationic intermediate with concomitant liberation of acetic acid. The carbocationic intermediate then reacts with neighboring phenolic moieties in a crosslinking reaction. The substitution reaction liberates a proton, making the process catalytic in nature, thus incorporating the concept of chemical amplification. These highly sensitive materials can be used as nonswelling negative multipurpose resists that function in deep‐UV, x‐ray or E‐beam modes. © 1993 John Wiley & Sons, Inc.