Replacing Ag^TSSCH₂‐R with Ag^TSO₂C‐R in EGaIn‐Based Tunneling Junctions Does Not Significantly Change Rates of Charge Transport

Abstract This paper compares rates of charge transport by tunneling across junctions with the structures Ag TS X(CH 2 ) 2 n CH 3 //Ga 2 O 3 /EGaIn ( n =1–8 and X= SCH 2  and O 2 C); here Ag TS is template‐stripped silver, and EGaIn is the eutectic alloy of gallium and indium. Its objective was to compare the tunneling decay coefficient ( β , Å −1 ) and the injection current ( J 0 , A cm −2 ) of the junctions comprising SAMs of n ‐alkanethiolates and n ‐alkanoates. Replacing Ag TS SCH 2 ‐R with Ag TS O 2 C‐R (R=alkyl chains) had no significant influence on J 0 (ca. 3×10 3 A cm −2 ) or β (0.75–0.79 Å −1 )—an indication that such changes (both structural and electronic) in the Ag TS XR interface do not influence the rate of charge transport. A comparison of junctions comprising oligo(phenylene)carboxylates and n ‐alkanoates showed, as expected, that β for aliphatic (0.79 Å −1 ) and aromatic (0.60 Å −1 ) SAMs differed significantly.