Regrowth of GaAs quantum wells on GaAs liftoff films ‘van der Waals bonded’ to silicon substrates

Eli Yablonovitch; Kathleen Kash; T.J. Gmitter; L. T. Florez; J. P. Harbison; E. Colas

doi:10.1049/el:19890123

Abstract

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We report the first epitaxial regrowth on lifted-off large-area micron-thick single-crystal GaAs films bonded by surface tension (van der Waals) forces to a foreign substrate. GaAs quantum wells grown by MOCVD on a GaAs film which had been van der Waals bonded to an Si substrate showed linewidths and luminescence efficiencies comparable to those grown directly on GaAs substrates.

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