Skip to content
RDL
Network
Ekosistem
Uygulama değiştir
EN
Hakkımızda
SSS
Giriş yap
Başla
Reduction of ohmic contact resistivity on p-type GaN by surface treatment — Jong Kyu Kim (2001) | RDL Network
Back
Cite
Save
Save for later
Share
Home
Publications
Reduction of ohmic contact resistivity on p-type GaN by surface treatment
Shared by
Ho Won Jang
Reduction of ohmic contact resistivity on p-type GaN by surface treatment
Article
2001
en
Authors
+1 more
JK
Jong Kyu Kim
Ho Won Jang
CJ
Chang‐Min Jeon
Discussion
(0)
Sign in
to like and join the discussion.
No comments yet. Be the first to comment.
Related publications
Article
2001
Room Temperature Ohmic contact on n-type GaN using plasma treatment
Ho Won Jang
,
Jong Kyu Kim
,
Chang Min Jeon
,
Jong‐Lam Lee
Article
2004
Mechanism for ohmic contact formation of Ni∕Ag contacts on p-type GaN
Ho Won Jang
,
Jong‐Lam Lee
Article
2003
Mechanism for Ohmic contact formation of oxidized Ni/Au on <i>p</i>-type GaN
Ho Won Jang
,
Soo Young Kim
,
Jong‐Lam Lee
Article
2001
Room-temperature Ohmic contact on <i>n</i>-type GaN with surface treatment using Cl2 inductively coupled plasma
Ho Won Jang
,
Chang Min Jeon
,
Jong Kyu Kim
,
Jong‐Lam Lee
Article
2002
Low-resistant and high-transparent Ru/Ni ohmic contact on <i>p</i>-type GaN
Ho Won Jang
,
W. Urbanek
,
M. C. Yoo
,
Jong‐Lam Lee
Discussion(0)
No comments yet. Be the first to comment.