Recombination Velocities on GaAs &lt; 100 &gt;  Surfaces Immersed in Aqueous Solutions

T. J. Gmitter; Eli Yablonovitch; Adam Heller

doi:10.1149/1.2096281

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Recombination Velocities on GaAs < 100 > Surfaces Immersed in Aqueous Solutions

Article 1988 en

Abstract

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In this note we examine the dependence of the surface recombination velocity (SRV) of n-GaAs on aqueous solution environments, including selenide solutions, and on ruthenium treatment of the surface (1, 2, 3)

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Recombination Velocities on GaAs &lt; 100 &gt; Surfaces Immersed in Aqueous Solutions